Customization: | Available |
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Type: | Piezoresistive Pressure Sensor |
Component: | SemiConductor Type |
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The sensors are piezoresistive pressure sensors based on ceramic. The measuring bridge is printed directly on one side of the ceramic diaphragm by means of thick film technology. The rear part of the diaphragm can be exposed directly to the medium to be measured. Because of the excellent chemical resistance no additional protection is normally required.
Thanks to the reinforced outer area (monolithic structure)the sensor can be mounted directly in a case by using an O-ring or else it can be mounted to a metal fitting. The sensors are designed in such a way so that temperature changes and overloading do not cause any loss in reliability. The use of ceramic ensures high linearity across the entire range of measurement and reduces effects of hysteresis to a minimum.
Pressure range:
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5bar, 10bar, 20bar, 25bar, 30bar, 50bar, 100bar, 300bar
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Sensitivity
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2.2-3.5mv / v
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Non-linearity
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≤ ± 0.2% fso
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Zero temperature drift
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≤ ± 0.3% fso
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Zero output
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± 0.5mv
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Diving voltage
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5… .30vDC
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Working temperature
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-40… 120 ºC (compensated -20… 80 ºC)
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Safety overload
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150% fs
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Ultimate overload
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300% FS (2-50bar) 250% FS (100-250bar) 150%FS(400-600bar)
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Comprehensive accuracy (non-linear + hysteresis)
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≤ ± 0.3% fs
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Repeatability
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≤ ± 0.2% fs
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Material
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al2o3
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Model | ||||||
Range | 0~X kPa; P: PSI; K: kPa; B: bar; M:MPa; m: mH2O | |||||
Precision | a: 1%F.S; b:0.5%F.S | |||||
Output | V1: 0.5-4.5V; V2:4-20mA | |||||
Power | P1:5VDC; P2:24V DC | |||||
Temperature range | T1:-40~120°C | |||||
QYB150 | 10B | 1a | V1 | P1 | T1 | Vendor Code |
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